Search results for "Equivalent series resistance"
showing 10 items of 12 documents
Relative efficiency revealed: Equations for k<inf>1</inf>&#x2013;k<inf>6</inf> of the PVGIS model
2014
The European PV Geographical Information System (PVGIS) describes module performance in terms of the relative efficiency with respect to Standard Testing Conditions (STC). The efficiency's dependence on irradiance and operating temperature is modeled with a bi-quadratic polynomial with respect to the relative temperature and the logarithm of relative irradiance. In earlier works, the present author derived relations between two model coefficients describing the irradiance dependence at 25°C, k 1 and k 2 , and I–V curve model parameters such as the series resistance RS and the ideality factor n. There was good agreement between the theoretical and fitted values of k 1 , but the fitted values…
Ideality factor behavior between the maximum power point and open circuit
2013
The local ideality factor analysis of dark and light I-V curves has been used in the past to study various performance degradation effects in solar cells. Trapping, edge recombination and injection-level-dependent recombination are expressed as “lumps, humps and bumps” in the plots of the local ideality factor over cell voltage (m-V plots). Earlier applications of this differential technique did not correct the plots for the series resistance effect. Thus, the bumps at the higher voltages introduced by some mechanisms were more difficult to quantify. A possible solution is to analyze ISC-VOC curves, but their measurement is not always possible. We present a formula for calculation of the RS…
Analytical Modeling of the Maximum Power Point with Series Resistance
2021
This paper presents new analytical expressions for the maximum power point voltage, current, and power that have an explicit dependence on the series resistance. An explicit expression that relates the series resistance to well-known solar cell parameters was also derived. The range of the validity of the model, as well as the mathematical assumptions taken to derive it are explained and discussed. To test the accuracy of the derived model, a numerical single-diode model with solar cell parameters whose values can be found in the latest installment of the solar cell efficiency tables was used. The accuracy of the derived model was found to increase with increasing bandgap and to decrease wi…
Series resistance determination and further characterization of c-Si PV modules
2012
Abstract This paper presents a new algorithm for determination of the series resistance of crystalline-Si PV modules from individual illuminated I–V curves. The ideality factor and the reverse saturation current are then extracted in the classic way. The approach is applied to in-situ measured data from modules based on two types of mc-Si feedstock. The results indicate that the method yields physically meaningful parameters. An improved definition of local ideality factor is suggested, resulting in m-V plots unaffected by the series resistance. In addition, m-I plots are introduced for the first time. The novel differential techniques reveal an unexpected rise of the ideality factor at ope…
Extracting parameters from semi-log plots of polycrystalline silicon PV modules outdoor I&#x2013;V data: Double-exponential model revisited
2010
This paper presents a method for extracting physically meaningful parameters from measured I–V curves of PV modules. The 7-parameter double-exponential model is applied in the modeling. The method is based on linear fitting of semi-logarithmic plots. The paper demonstrates a new technique to estimate the series resistance of a module with high accuracy from such plots. As a result, also the reverse saturation current and the quality factor of the diffusion diode can be determined. The method is applied to outdoor I–V data from a test station with three similar, but not identical, polycrystalline-Si modules. The values of the series resistances found with this method deviate somewhat from th…
Assessment of a New Analytical Expression for the Maximum-Power Point Voltage with Series Resistance
2021
This work compares a recently developed analytical expression for the maximum-power point voltage with experimental data, to test its usability for crystalline silicon solar cells. The experimental data covers measurements from 18 multicrystalline silicon solar cells with different bulk resistivities and cell architectures. We show that the expression is able to predict the maximum power obtainable by the measured cells with relative discrepancies below 1%. Additionally, we compare the accuracy of this new expression with two already existing models.
Impact of transparent conductive oxide on the admittance of thin film solar cells
2010
Abstract The impact of transparent electrically conducting oxide (TCO) on the admittance measurements of thin film p–i–n a-Si:H solar cells was investigated. Admittance measurements on solar cell devices, with different area and geometry, in a wide range of frequencies and biases were performed. The admittance measurements of the investigated solar cells, which use the TCO as an electrical contact, showed that the high frequency admittance per area unit depends on the area. This effect increases both with the probe frequency and the size of the solar cells. Transmission line model valid for strip geometry which explains how the resistivity of the TCO layer impacts the measured admittance of…
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
2012
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …
Equivalent Circuit Modelling of Ferrite Inductors Losses
2018
The modelling of the magnetic losses in the core of ferrite inductors for power conversion circuits has been considered in this paper. On the basis of the Revised Generalized Steinmetz Model (RGSE) an equivalent circuital modelling has been obtained. The losses are modelled as an equivalent resistance connected in parallel to the inductor. The model has been tested under periodic triangular current waveforms.
High voltage vacuum-deposited CH3NH3PbI3-CH3NH3PbI3 tandem solar cells
2018
The recent success of perovskite solar cells is based on two solid pillars: the rapid progress of their power conversion efficiency and their flexibility in terms of optoelectrical properties and processing methods. That versatility makes these devices ideal candidates for multi-junction photovoltaics. We report an optically optimized double junction CH3NH3PbI3–CH3NH3PbI3 tandem solar cell where the matched short-circuit current is maximized while parasitic absorption is minimized. The use of an additive vacuum-deposition protocol allows us to reproduce calculated stack designs, which comprise several charge selective materials that ensure appropriate band alignment and charge recombination…